Comparative analysis of selective area grown Ga- and N-polar InGaN/GaN nanowires for quantum emitters
In this paper, we report the molecular beam epitaxy-grown InGaN-quantum disks embedded within selective area epitaxy of GaN nanowires with both Ga- and N-polarities.A detailed comparative analysis of these two types of nanostructures is also provided.Compared to Ga-polar nanowires, N-polar nanowires Foot Files are found to exhibit a higher vertical